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| TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure D High transition frequency fT = 12 GHz 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 TSDF1205 Marking: F05 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 1 2 13 653 13 566 13 654 13 566 3 4 4 3 TSDF1205W Marking: WF0 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter TSDF1205RW Marking: W0F Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 9 4 2 12 40 150 -65 to +150 Unit V V V mA mW C C Tamb 132 C Document Number 85065 Rev. 5, 30-Jun-00 www.vishay.de * FaxBack +1-408-970-5600 1 (6) TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 2 V, IC = 2 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 2 mA V(BR)CEO 4 V VCEsat 0.1 0.5 V hFE 50 120 250 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test Conditions VCE = 2 V, IC = 5 mA, f = 1 GHz VCB = 1 V, f = 1 MHz VCE = 1 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = 50 W, f = 2 GHz VCE = 2 V, IC = 2 mA, f = 2 GHz (@Fopt) VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = 50 W f = 2 GHz VCE = 2 V, IC = 5 mA, Z0 = 50 W, f = 2 GHz Symbol fT Ccb Cce Ceb F Gpe Gpe S21e2 Min Typ 12 0.2 0.35 0.15 1.3 13 11.5 12.5 Max Unit GHz pF pF pF dB dB dB dB Transducer gain www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 85065 Rev. 5, 30-Jun-00 TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) 100 P tot - Total Power Dissipation ( mW ) 80 60 40 20 0 0 14284 0.5 f=1MHz 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB - Collector Base Voltage ( V ) 20 40 60 80 100 120 140 160 14286 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 16 fT - Transition Frequency ( GHz ) 14 12 10 8 6 4 2 0 0 14285 Figure 3. Collector Base Capacitance vs. Collector Base Voltage 3.0 f=1GHz VCE=3V F - Noise Figure ( dB ) 2.5 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14 14287 VCE=2V f=2GHz ZS=50W VCE=2V 0 1 2 3 4 5 6 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current Document Number 85065 Rev. 5, 30-Jun-00 www.vishay.de * FaxBack +1-408-970-5600 3 (6) TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Dimensions of TSDF1205 in mm 96 12240 Dimensions of TSDF1205R in mm 96 12239 www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 85065 Rev. 5, 30-Jun-00 TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Dimensions of TSDF1205W in mm 96 12237 Dimensions of TSDF1205RW in mm 96 12238 Document Number 85065 Rev. 5, 30-Jun-00 www.vishay.de * FaxBack +1-408-970-5600 5 (6) TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 85065 Rev. 5, 30-Jun-00 |
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